Open Access

Process Development for Fabrication of Photomasks using LASER Pattern Generator

A. B. Dhaulakhandi , Micro Electronic Devices and Computational Systems, DRDO HQ, New Delhi, India. S. K. Koul , Solid State Physics Laboratory, Delhi, India. Shyamli Thakur , Solid State Physics Laboratory, Delhi, India. M. U. Sharma , musharma@sspl.drdo.in
Solid State Physics Laboratory, Delhi, India. Dinesh Kumar Department of Electronic Science, Kurukshetra University, Haryana, India.

---

---

Abstract

This paper describes the development of photomaskfabrication process for a wide range of structures written on Chrome blanks using 413 nm wavelength LASER pattern generator. For development of requisite processes, test structures ranging from 0.4 µm to 500 µ min size were designed and fabricated. Apart from the writing process, all other unit processes used for the fabrication of structures were chemical processes which were individually optimized to develop an integrated fabrication process. The process was validated by writing SAW resonator structures comprising of IDT's and reflectors as per the specified tolerances.

Full Text

Reference

---

Babin, S., Handbook of photomask manufacturing technology, Taylor & Francis, New York(2005).

doi:10.1201/9781420028782.ch3

Bohan, M. J., Hamaker, H. C. and Montgomery, W., Implementation and characterization of a DUV raster scanned mask pattern generation system, Proc. SPIE, 4562(42), 16-37(2002).

doi:10.1117/12.458301

Buck, P. and Grenon, B., A comparison of wet and dry chrome etching with the CORE-2564, Proc. SPIE, 2087(10), 42-49(1993).

doi:10.1117/12.167247

Park, K. T. and Lee K. Y., Application of dry etching process on high end Cr photomasks, Proc. SPIE, 3412(17), 246-251(1998).

doi:10.1117/12.328814

Rizvi, S. A., Mask processing, Handbook of photomask manufacturing technology, Taylor & Francis, New York(2005).

doi:10.1201/9781420028782

Taravade, K. N., Mueller, R. and Erichsrud, S., Line edge roughness comparison between wet and dry etched reticles, Proc. SPIE, 4889(15), 754-758 (2002).

doi:10.1117/12.467246