Development of Lift-off Process using Plasma-enhanced Chemical Vapor Deposition Silicon Dioxide
J. Environ. Nanotechnol., Volume 9, No 2 (2020) pp. 04-07
Abstract
Lift-off is a simple, easy method for realizing metal patterns on a substrate, especially for thin metal films such as platinum, gold and titanium, difficult to be etched by conventional methods. Defining metal lines at sizes below 2 µm is difficult by wet and plasma chemistry. We have carried out lift-off process experiments using positive photoresist Fuji Film OiR 906-17HD, PECVD silicon dioxide of 1µm, and metal thickness of 1000, 1500 and 2000 µm on silicon and quartz wafers. Different dimensions of metal patterns were achieved with 3% accuracy on silicon and quartz wafers. This method can be used for the realization of various Micro-electro mechanical system devices.
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Reference
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