Indium Nitride Nanostructures Prepared by Various Growth Techniques
J. Environ. Nanotechnol., Volume 8, No 4 (2019) pp. 38-44
Abstract
In the last few years the interest in the material properties of Indium Nitride (InN) semiconductor has been remarkable. There have been significant improvements in the properties and growth methods of InN nanowires (NWs). High quality single crystalline InN NWs with a high-growth rate are regularly obtained. InN NWs exhibit a highly conducting quasi-two-dimensional electron gas (2DEG) on their surface, which causes nearly metallic conductivity even at low temperatures. The newly verified narrow bandgap (~0.69 eV) of InN extends the spectral range covered by III-nitrides to near-infrared, which offers a great advantage of nitrides for optoelectronic applications. In this article, the work accomplished in the InN NW research has been reviewed from the evolution. The growth, characterization and recent developments in InN NW research has been focused mainly. The most popular growth techniques, Metal-organic chemical vapor deposition (MOCVD) and Molecular beam epitaxy (MBE) were discussed in detail. Important phenomena in the growth of InN NWs, as well as the problems remaining for future study, were also addressed.
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