Welcome to JENT its Tuesday 12th of December 2017

Journal of Environmental Nanotechnology

(A Quarterly Peer-reviewed and Refereed International Journal)
ISSN(Print):2279-07 48; ISSN(Online):2319-5541
CODEN:JENOE2

Effect of Current Densities on Structural and Optical Properties of Brush Plated CuInSe2 (CIS)Thin films

Abstract

CuInSe 2 (CIS)-based thin film compounds are considered one of the most efficient absorber materials for solar cell applications, now reaching conversion efficiencies as high as almost 20% for laboratory-sized devices. To make CIS-based thin films solar cells even more attractive and competitive, an alternative low cost process has to be developed for the manufacture of the high quality CIS absorber layers. In this work, CIS films were deposited by the brush plating technique for the first time. AR grade Copper sulphate (0.03M), Indium sulphate (0.05 M) and 0.005 M Selenium oxide was rsed for the deposition of films. The deposition current density was varied in the range of 10 – 100 mA cm-2. XRD analysis of the as-deposited films verified the existence of the main Bragg peaks for CIS in a chalco-pyrite crystal structure. The chemical composition of the films identiûed using XPS found to be copper rich. Tauc’s plot indicated a direct band gap of 0.99 eV. Surface morphology of the films indicated an increase of grain size and RMS
value of surface roughness from 0.32 to 1.3 nm with depositon current density. Raman spectra of the films exhibited an intense peak at around 175 cm 1. This peak can be assigned to the A 1 mode of CIS. Photoelectrochemical cell (PEC) studies indicated an open circuit voltage of 0.49V and short circuit current density of 13 mA cm-2 for the films deposited at 100 mA cm-2. The photo output increased with deposition current density.

Article Type: Orginal Research Article

Corresponding Author: P. Thirunavukkarasu 2  

Email: irarasu@yahoo.co.in

This article has not yet been cited.

N.P. Subiramaniyam 1,  P. Thirunavukkarasu 2*.  

1. Department of Electronics and Communication systems, A. J. K. College of Arts and Science, Coimbatore, TN, India.

2. Department of Electronics, SRMV College of Arts and Science, Coimbatore, TN, India.

J. Environ. Nanotechnol. Volume 2, No.2 (2013) pp. 38-43
ISSN: 2279-0748 eISSN: 2319-5541
ENT132012.pdf
Download Citation

Reference

Abdul-Hussein, N.A., KSamaan, A.N.Y., Tomlinson, D, Hill, A.E. and Neumann, H.,
Cryst. Res. Technol. 20, 509–514 (1985).

Akl, A.A. and Afify, H.H. Mater. Res. Bull. 43, 1539–1548 (2008).

Briggs, D. and Seah, M.P., Practical Surface Analysis, Auger and X-ray Photoelectron
S pectroscopy, second ed., 1, John Wiley & Sons, New York, (1993).

Endo, S., Nagahori, Y. and Nomura, S., Jpn. J. Appl. Phys., Part 2 35, 1101–1103 (1996).

Guillemoles, J.F., Cowache, P., Massaccesi, S., Thouin, L., Sanchez, S., Lincot, D. and Vedel, J. Adv. Mater. 6, 376–379 (1994).

Kang, S.H., Kim, Y.K., Choi, D.S., Sung, Y.E., Electrochim. Acta 51 (2006) 4433.

McCandless, B.E. Birkmire, R.W. 20th IEEE Photovoltaic Specialists Conference,
2, 1510–1514 (1988).

Merdes, S., Kinsoshita, A., Haajoub, Z.H. and Sugiyamam, M., J. Phys. D Appl. Phys., 47,
8284 (2008).

Ramdani, O., Chassaing, E., Canava, B., Grand, P.P., Roussel, O., Lamirand, M., Rzepka, E., Etcheberry, A., Guillemoles, J.F., Lincot, D. and Kerreca, O., J. Electrochem. Soc. 154 (8) , D383–D393 (2007).

Repins, I., Contreras, M.A., Egaas, B., DeHart, C., Scharf, J., Perkins, C.L. and Noufi, R., Prog. Photovolt. Res. Appl. 16, 235–239 (2008).

Rincon, H.C. and Ramirez, F.J., J. Appl. Phys. 72,  4321 (1992).

Tanino, H. and Maeda, T., Phys. Rev. B 45, 13323 (1992).

Wagner, C.D., Riggs, W.M.and Davis, L.E., J.F. Moulder, in: G.E. Mullenberg (Ed.), of
X-ray Photoelectron Spectroscopy, Minnesota, (1978).

White, F.R., Clark, A., HGraf, M.C., J. Appl. Phys. 50, 544–545 (1979).

Yoon, S.H., Seo, K.W., Lee, S.S. and Shim, W., Thin Solid Films 515, 1544– 1547 (2006).

>>